Abstract
Conventional PbSe infrared photodetectors typically demands a substantial external electric field, posing challenges in energy-constrained environments. Self-powered photodetectors present a promising avenue for addressing such electricity-related challenges. Nevertheless, the inherent limitations of symmetric Schottky contacts in metal-semiconductor-metal (MSM) photodetectors constrain their self-powered performance, resulting in opposing photocurrents. Constructing asymmetric MSM structures usually requires intricate design or sustained external fields. In this study, we propose a novel contact engineering strategy based on iodine doping to modulate surface work functions of PbSe film. Utilizing Cr electrodes, we achieve Ohmic contact on the iodine-doped top surface of PbSe film and Schottky contact on the as-grown bottom surface. This approach establishes a self-powered PbSe infrared photodetector with an asymmetric top-bottom MSM structure. We comprehensively investigate contact engineering by investigating surface chemical states, elemental variations, and surface work functions variation. Remarkably, the photodetector demonstrates an exceptional zero-bias detectivity of 1.13 × 109 Jones, with an extremely low dark current of 3.67 pA, high Ilight/Idark ratio exceeding 104, and extremely short response times of less than 1 ms, respectively. Our work introduces a new strategy for modifying the band structure, contributing to the fabrication of high-performance self-powered photodetectors.
Published Version
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