Abstract

Sn-based organic-inorganic perovskite is a promising light harvesting material to replace toxic problematic Pb-based perovskite. However, surface morphology of 3-dimensional (3D) or 2D/3D mixed Sn-based perovskite structure is difficult to control owing to its very fast crystal growth. Thus, it is necessary to control Sn-based perovskite crystal growth for an efficient photovoltaic performance. In this regard, this work mainly focused on highly oriented crystal growth of 2D/3D mixed Sn-based perovskite structure using antisolvent engineering approach. The various antisolvents including anisole (AS), chlorobenzene (CB), toluene (TL), and diethyl ether (DE) were employed for formation of 2D/3D Sn-based perovskite film. The evaporation rate of antisolvents plays a key role to control the morphology of 2D/3D Sn-based perovskite by altering the nucleation and crystal growth. As a result, TL assisted perovskite film having compact morphology that exhibited best PCE of 8.78%. However, in case of DE, CB, and AS assisted perovskite films exhibited poor morphology due to faster or slower the evaporation rate of these antisolvents compared to TL. Therefore, the introduced approach provides an interesting insight on development of high quality 2D/3D mixed Sn-based perovskite film.

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