Abstract
Efficient photostable ZnS-passivated CdS:Mn (CdS:Mn/ZnS core/shell) luminescent quantum dots (Qdots) were synthesized using a reverse microemulsion process. Inorganically passivated Qdots with a core (CdS:Mn) diameter of ~2.3 nm and a ZnS-shell thickness of ~0.4 nm exhibited improved quantum yield (18 %), as compared to similar n-dodecanethiol-capped (organically passivated) CdS:Mn Qdots (3 %). Upon UV-irradiation in air for 3 hrs, CdS:Mn/ZnS Qdots exhibited photo-brightening and a stable emission with a quantum yield of 28 %. X-ray photoelectron spectroscopy (XPS) data revealed that this photo- brightening correlated with the development of a ZnSO4 layer on the Qdot surface. A direct current electroluminescence (EL) device with a hybrid organic/inorganic multilayer structure of ITO//PEDOT-PSS//PVK//CdS:Mn/ZnS//Al was tested. The EL data suggested that the electron-hole recombination zone was confined to Mn in the Qdot layer.
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