Abstract
Detailed optical characteristics of excitonic green emission/absorption in ZnSSe:Te epitaxial layers, grown by molecular beam epitaxy, were studied by photoluminescence (PL) and PL excitation measurements. Based on these optical properties, we have developed bright and long-lived green (∼500 nm) light-emitting diodes (LEDs) using ZnS0.11Se0.85:Te0.04 epilayers as active layers. The ZnSSe:Te-based LEDs exhibit a fairly long device lifetime (>2000 h) when operated at 3 A/cm2 under CW condition at room temperature. The green LEDs show only slow-mode degradation, and the degradation mode is quite different from that of II–VI-based laser diodes (LDs) and LEDs employing the ZnCdSe–ZnSe system. It is confirmed that the Te-doping-induced “alloy-hardening effect” plays an important role in both efficient emission and strong suppression of the device degradation.
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