Abstract
Compared with conventional silicon (Si)-based Pulse Width Modulation (PWM) rectifiers, PWM rectifiers based on silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have significant technical advantages and broad application prospects in terms of efficiency and power density, inherited from the high-speed switching feature. However, high-speed switching also induces gate-source voltage interference, which impacts the overall character of the conversion system. This paper considered the impact of gate-source voltage interference on loss, revealing an efficiency optimization for all-SiC PWM rectifiers. Firstly, this paper theoretically investigated the mechanism of improving the conversion system efficiency by using the 4-pin Kelvin packaged SiC MOSFETs. Then, based on the industrial product case study, loss distribution, using different package styles, was quantitatively analyzed. Finally, experiment test results verified the efficiency improvement of the PWM rectifier with the 4-pin Kelvin package SiC MOSFETs.
Highlights
Owing to the advantages of high power factor, low harmonic distortion, and bi-directional power flow, Pulse Width Modulation (PWM) rectifiers attract much attention from academia since their emergence and are widely used in industrial areas, such as renewable power generation [1,2], railway power supply [3,4], and electric vehicle (EV) charging [5,6]
The framework diagram of the all-silicon carbide (SiC) PWM power module system is shown in Figure 2, and the system mainly composed of protection device, electromagnetic interference (EMI) filter, PWM rectifier, LLC resonant converter, drive circuits, a microcontroller unit (MCU), cooling fans, and auxiliary power supply (APS)
For 4-pin SiC Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), the switching process is similar to 3-pin SiC MOSFETs, and it is the only difference that 4-pin SiC MOSFETs eliminate the effect of the voltage drops over the source parasitic inductance for Kelvin package
Summary
Owing to the advantages of high power factor, low harmonic distortion, and bi-directional power flow, Pulse Width Modulation (PWM) rectifiers attract much attention from academia since their emergence and are widely used in industrial areas, such as renewable power generation [1,2], railway power supply [3,4], and electric vehicle (EV) charging [5,6]. The gate-source voltage interference, induced by the fast switching speed, blocks the further release of the performance of SiC MOSFETs. Fast switching could reduce switching loss and improve efficiency. The acceptance and adoption of those above-mentioned advanced gate-source interference suppression techniques are limited, especially in low-cost applications, such as EV charging piles [23,24,25] In such applications, to mitigate the gate-source voltage interference problem without additional complexity, reducing the common source inductance of the device becomes one of the effective methods to mitigate the gate-source voltage interference [26]. The impact of the gate-source voltage interference on the loss of the rectifier is explained, and the method to improve system efficiency by using 4-pin Kelvin packaged SiC MOSFETs is introduced
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