Abstract
The pair generation rate, ideal characteristics and conversion efficiency of a solar cell with a specific thin-film design discussed previously are calculated and compared with those of a conventional design chosen as standard. Various factors affecting the efficiency are examined in order to find parameters that will improve the efficiency relative to that of the standard cell. It is found that for an n- on p-substrate Si thin film of thickness 2.5 mu m based on the present design, the efficiency can be improved significantly relative to that of the standard cell by exploiting the back surface field effect and by raising the acceptor impurity concentration to a level comparable to the donor impurity concentration.
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