Abstract
Up-converted photoluminescence (UPL) signal of long-range ordered (Al 0.5 Ga 0.5 ) 0.5 In 0.5 P/GaAs(001) was observed around 2.18 eV at 11 K. Excitation-power dependence of the intensity obeys a power law with a slope 1.3. The power of slope is the same as that of normal photoluminescence (NPL) intensity. On the other hand, the NPL intensity measured at an elevated temperature shows a linear response. These results suggest that the low temperature UPL depends on carrier-localization properties. Time-resolved UPL measurements show a steep rise at the higher energy side and a slow rise at the lower energy side. This result reveals a relaxation process of the photoexcited carriers from higher lying states to lower lying states
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