Abstract
The efficiency of photocarrier injection in a VO 2 /TiO 2 :Nb heterostructure is studied by measuring I – V characteristics at room temperature under ultraviolet light irradiation. It is revealed that photogenerated hole carriers in the TiO 2 :Nb substrate are injected and accumulated in the VO 2 film by the photovoltaic effect. The surface charge density is controlled successfully in a wide range of 10 9 –10 13 cm -2 as a function of light irradiance. The maximum hole density of 9×10 18 cm -3 is attained at a light irradiance of 133 mW/cm 2 , which is estimated by assuming the uniform distribution of holes in the film. It is suggested that high efficiency can be achieved by utilizing the large dielectric constant of titanium oxide substrates.
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