Abstract
High quality multiple quantum well Al0.35Ga0.65N active layers with narrow wells designed for ultraviolet (UV) light-emitting diodes using the phonon engineering approach are characterized using quasi-steady-state and time-resolved photoluminescence spectroscopy. The photoluminescence intensity decrease with temperature increasing from 10to300K was very small, and the upper limit of the internal quantum efficiency (IQE) of up to 70% was estimated based on this temperature dependence. Carrier lifetime measurements yielded the lower bound of the IQE to be ∼35% under optical pumping, whereas IQE of ∼25% was estimated from the measured external quantum efficiency and the light extraction efficiency calculated by ray tracing. The observed photoluminescence features and the high IQE are interpreted as a consequence of strong carrier (exciton) localization.
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