Abstract
Results of a theoretical analysis of the influence of various factors on the efficiency of excitation of space-charge waves in thin-film semiconductor structures by a single strip Schottky barrier are presented. It is shown that to increase the efficiency of conversion of a microwave signal into space-charge waves, it is advisable to use a Schottky barrier with a small contact potential with optimized values of the width of the Schottky barrier and the electron concentration in the film.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
