Abstract
Abstract The needle-like antireflection Hf-doped In2O3 thin films (IHFO) were prepared at a substrate temperature of 200 °C by glancing angle radio frequency magnetron sputtering technology. The structural, electrical and optical properties of the needle-like IHFO thin films were characterized. The significant reduction of reflection loss of the conventional and needle-like IHFO bilayer films deposited on the textured silicon was observed. The short-circuit current and efficiency of the solar cell were improved by 0.52 mA/cm2 and 0.39% utilizing a needle-like IHFO thin film as an antireflection layer.
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