Abstract
This paper deals with the performance evaluation of low-voltage power MOSFETs having integrated Schottky diodes into the same die. The combined MOSFET-Schottky diode structure has been realized in order to improve both the efficiency and the performances of low power synchronous-rectifier buck converters in the field of mobile applications. The main technology issues are shortly recalled and the focus is on the innovations and the advantages deriving from the new device. The behavior in DC-DC converters such as Voltage Regulator Modules (VRMs) has been evaluated in order to give evidence to the significant improvements that may be achieved by using combined MOSFET-Schottky diode structure. The DC-DC converter efficiency improvement has been evaluated by comparing the single chip device performances with a standard MOSFET in VRM applications.
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