Abstract
Plasma-deposited silicon nitride films prepared by plasma CVD or reactive magnetron sputtering were studied as antireflective coating for various solar cells. Remarkable improvement of performance was found in case of n+/p cells using single crystalline substrate with texturized surface and polycrystalline substrate. These are due to nitrogen atoms contained in the AR coating, which diminish the surface recombination velocity in two ways. One is the effect of the retarding field for minority carriers built in near surface of silicon by the aid of space charge in AR coating, and the other is the result of an inactivation of recombination centers such as dangling bonds or of trapping levels existing at grain boundaries or surfaces of silicon.
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