Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays

Abstract

In this study, the periodic SiO2 nanosphere nanopatterned sapphire substrate (SiO2-NPSS) was made using self-assembled SiO2 nanosphere monolayer template and inductively coupled plasma (ICP) etching. And the self-assembled SiO2 nanosphere monolayer was directly embedded into the GaN/sapphire interface by nanoscale epitaxial lateral overgrowth (NELOG). For comparison, a common nanopatterned sapphire substrate (C-NPSS) was also made through dry etching with the SiO2 nanospheres used as the mask. Compared with LEDs grown on C-NPSS and flat sapphire substrate (FSS), the external quantum efficiency of LEDs with SiO2 nanopheres (SiO2-NPSS) was increased by 30.7% and 81.9% under a driving current 350mA. The SiO2-NPSS not only improved the crystalline quality of GaN but also enhanced the light extraction efficiency (LEE) of LED. And the SiO2-NPSS LED also showed more light in vertical direction and more uniform light distribution. By finite-difference time-domain (FDTD) simulation, we confirmed that more light could be reflected from the GaN/SiO2 interface than the GaN/sapphire interface because the refractive index of SiO2 was lower than that of sapphire. Therefore, LED grown on the SiO2-NPSS showed superior light extraction efficiency compared to that on C-NPSS.