Abstract
In this paper, a hybrid switch with the combination of large-current silicon (Si) insulated gate bipolar transistor (IGBT) and small-current silicon carbide (SiC) metal-oxide semiconductor field-effect transistor ( mosfet ) is utilized in a three-phase T-type three-level grid inverter. The hybrid switch can optimize the cost of the system while achieving high efficiency. The relationship between efficiency improvement and cost of the hybrid switch is investigated. Several switching patterns, which can decrease the loss of the small-current SiC mosfet for the hybrid switch, are studied. Different switching patterns for the hybrid switch of the grid inverter are compared based on the inverter efficiency. Finally, a 20 kW three-phase T-type three-level grid inverter prototype with the hybrid switch of large-current Si IGBT and small-current SiC mosfet (1:2.4 SiC/Si current ratio) is built to verify the main results.
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