Abstract
In conventional GaN light-emitting diodes (LEDs), a significant gap exists between the internal and external efficiencies owing to the narrow escape cone for light in high refractive index semiconductors. In this paper, p-side-up GaN/sapphire LEDs with surface-textured indium-tin-oxide (ITO) window layers were investigated using natural lithography with polystyrene spheres as the etching mask. Under optimum etching conditions, the surface roughness of the ITO film can reach 140 nm, while the polystyrene sphere on the textured ITO surface is maintained at about 250-300 nm in diameter. The LEDs fabricated using the surface-textured ITO provided an output power that exceeded that of the planar-surface LED by about 30% and 40% at 20 and 400 mA current injection, respectively. After calculating, the extraction quantum efficiency of ITO/GaN LEDs with and without textured surface is 22.6% and 17.4%, respectively. There is about 5.3% improvement in the extraction quantum efficiency
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Journal of Selected Topics in Quantum Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
