Abstract
InGaN based MQW solar cells have been fabricated with 4 different transparent top electrode structures: (1)- ITO 200 nm, (2)-ITO nano dots only, (3)-ITO nano dots on ITO 50 nm and (4)-ITO nano dots on ITO 100 nm. The solar cell with the ITO 50 nm on ITO nano dots under AM 1.5 conditions showed the best results: 2.3 V for V(oc), 0.69 mA/cm(2) for J(sc), 41.8% for peak EQE, and 0.91% for conversion efficiency. Efficiency improvement was possible due to the decreased reflectance achieved by the ITO nano dots covered with an ITO film with optimized thickness.
Highlights
Indium Gallium Nitride (InGaN) material is widely used in various optoelectronic devices including light-emitting diodes (LEDs) [1] and laser diodes (LDs) [2]
In order to verify the enhancement through reducing the reflectance, solar cells were fabricated with the (1)-200 nm indium tin oxide (ITO) film, (2)-ITO nano dots only, (3)-ITO 50 nm on the ITO nano dots and (4)-ITO 100 nm on the ITO nano dots, respectively
F.F. of these samples are very similar in spite of the degraded curvature in the J-V curve, which is known to come from doping variation and/or polarization in the InGaN Multi quantum well (MQW) structure [24]
Summary
Indium Gallium Nitride (InGaN) material is widely used in various optoelectronic devices including light-emitting diodes (LEDs) [1] and laser diodes (LDs) [2]. One of the merits for solar cell applications is that the band gap energy can be engineered from 0.7eV for InN to 3.4eV for GaN by varying the indium composition, which covers most of the solar spectrum from UV to IR [6] Despite this potential advantage, conversion efficiency of InGaN based solar cells is still very low. The ITO has been used in InGaN-based solar cells [16] It is well-known that ITO thickness optimization is important in LED applications since the reflectance is fluctuated by the variation of the ITO thickness resulting in reduced light extraction at the target wavelength [17]. We report a new way of texturing by deposition of thickness-optimized ITO films on Received 26 Jul 2012; revised 3 Sep 2012; accepted 7 Oct 2012; published 1 Nov 2012 5 November 2012 / Vol 20, No S6 / OPTICS EXPRESS A992 the ITO nano dots, so that the films can have minimum reflectance as well as no electrical degradation originated from the ITO etching process
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