Abstract
In this paper the effect of the absorber layer and n-layer properties such as thickness and doping concentration on the electrical characteristic of the a-Si:H/a-SiGe:H thin film hetero structure solar cells such as photo-generation rate, recombination rate and electric field through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. Especially, current density of the cell can be enhanced without deteriorating its open circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si: H/a-SiGe solar cell is improved by about 6.5% compared with the traditional a-Si: H solar cell. This work presents a novel numerical evaluation and optimization of amorphous silicon double junction (a-Si:H/a-SiGe:H) thin film solar cells and focuses on optimization of a-SiGe:H mid-gap single junction solar cell based on the optimization of the Ge content in the film, thick nesses of the i-layer and n-layer, and doping concentration of the films. Maximum efficiency of 23.5%, with short circuit current density of 265 A/m <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and open circuit voltage of 1.13V for double junction solar cell has been achieved.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
