Abstract
An effective light-harvesting scheme for InGaN-based multiple quantum well solar cells is demonstrated using stacking layers of polystyrene nanospheres. Light-harvesting efficiencies on the solar cells covered with varied stacks of nanospheres are evaluated through numerical and experimental methods. The numerical simulation reveals that nanospheres with 3 stacking layers exhibit the most improved optical absorption and haze ratio as compared to those obtained by monolayer nanospheres. The experimental demonstration, agreeing with the theoretical analyses, shows that the application of 3-layer nanospheres improves the conversion efficiency of the solar cell by ~31%.
Highlights
Among the many published methods for AR surface fabrication, nanosphere lithography is a popular one in light of its simplicity and capability to yield various geometrical features[11,12,13,14,15]
The simulation result agrees with the experimental observation that photocurrents of the InGaN/GaN MQW solar cell is noticeably increased upon the application of stacking PS nanospheres (1–3 layers), leading to the ηenhancement of ~31%
The dimension of PS nanospheres used in this study is 450 nm in diameter, which is commonly adopted by many groups involved in self-assembly nanoengineering
Summary
Among the many published methods for AR surface fabrication, nanosphere lithography is a popular one in light of its simplicity and capability to yield various geometrical features[11,12,13,14,15]. There has been much efforts devoted to optimize the performances and effective area of nanosphere-based AR coating[12,13,16]. Stacking the nanospheres has been demonstrated as an effective approach to enhance Mie scattering in a wide range of wavelengths[17], which is strongly desired for solar cells considering the light trapping effect induced on device surface[18]. The effect of stacking polystyrene (PS) nanospheres on the performances of InGaN-based solar cells is systematically investigated. The simulation result agrees with the experimental observation that photocurrents of the InGaN/GaN MQW solar cell is noticeably increased upon the application of stacking PS nanospheres (1–3 layers), leading to the ηenhancement of ~31%. The concept presented here should benefit the development of InGaN solar cells, as well as the light-harvesting scheme applicable to a wide variety of optoelectronic devices
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