Abstract
In this work, we report the fabrication method using a Cu(In,Ga)Se2 (CIGS) quaternary target containing NaF to obtain thin-film solar-cell devices on polyimide (PI) foils. In order to improve the efficiency of the CIGS solar cells, multiple metal layers were prepared on both sides of the PI substrate, and the annealing process was investigated. The sandwich structure of Ti/Cr/Mo multiple layers prepared on PI foils can improve thermal budget of the substrate as it endures higher annealing temperature (520 °C) for short time (5 min). A 2-step annealing process was adopted to ensure the integrity and fewer electrical defects of the absorber film. The distribution of Na and Ga elements in the annealed films was improved by adding a high-temperature selenization process. CIGS cells with better conversion efficiency can be obtained by this fabrication process. An average power conversion efficiency of 13.6% has been achieved for the prepared cells.
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