Abstract
Abstract Core/shell quantum dots (QDs) always favor electron injection more than hole injection because of the deeper energy levels. Therefore, it is still challenging to achieve highly efficient quantum dot light-emitting devices (QLEDs) needing excellent carrier injection balance. Here, efficient QLEDs employing 4,4,4-tris(N-Carbazolyl)-triphenylamine (TCTA) doped with phosphorescent material tris(2-phenylpyridine) iridium [Ir(ppy)3] as trapping-type electron buffer layer are reported. Compared with conventional devices, efficiency enhancement reaching to 89% can be observed in such QLEDs. It is proved that the electron trap and blocking effect can efficiently improve carrier injection balance without sacrificing the operating voltage and luminance, mainly resulting in the considerable efficiency enhancement.
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