Abstract
The InGaN‐based blue light‐emitting diodes (LEDs) with dip‐shaped quantum wells (QWs) and conventional QWs were fabricated by MOVPE. The performances of fabricated InGaN‐based LEDs were investigated experimentally and analyzed theoretically. The results reveal that the efficiency droop of InGaN‐based LED is suppressed by using dip‐shaped QWs structure. Firstly, the dip‐shaped QWs LED has higher emission intensity compared with the conventional QWs LED due to the stronger quantum confinement and weaker polarization effect. Furthermore, the effective combination region in dip‐shaped QWs does not reduce obviously which decrease will lead to efficiency droop aggravation. As a result, the efficiency droop at 50 A cm−2 injection current for dip‐shaped QWs LED reduce from 59% for conventional QWs LED to 48%. So, the dip‐shaped QWs can be used to suppress the efficiency droop of InGaN‐based LEDs.
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