Abstract
We demonstrate that the efficiency droop phenomenon in multiple quantum well InGaN/GaN light-emitting diodes (LEDs) may be connected to the current crowding effect. A numerical model of internal quantum efficiency calculation is presented that takes into account nonuniform lateral carrier injection in the active region. Based on this model, we examine the effect of current crowding on the efficiency droop using comparison of simulated internal quantum efficiency of InGaN LEDs with low and high uniformity of current spreading. The results of simulations and measurements show that the devices with low uniformity of current spreading exhibit higher efficiency droop and lower roll-off current value.
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