Abstract
AbstractExcitation power density dependence of photoluminescence (PL) efficiency is studied in the temperature range from 8 to 300 K for AlGaN multiple quantum well structures containing quantum wells of different width. PL efficiency droop is observed and dependence of the droop effect on the well width and lattice temperature is discussed. Photoluminescence band shape reveals strong carrier heating. It is shown that the heating effect has a substantial influence on the photoluminescence efficiency droop, especially at low lattice temperatures. Fitting of the temperature dependence of the PL band width with that obtained by the Monte Carlo simulation of carrier (exciton) hopping via localized states shows that (i) the potential fluctuations can be fairly accurately described using a double‐scaled potential profile model, (ii) the localization becomes stronger in narrower quantum wells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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