Abstract
In order to clarify the origin of the efficiency droop effect in InGaN based blue multiple-quantum-well (MQW) light emitting diodes (LEDs), a reasonable model is set up, taking all the possible factor (carrier delocalization, carrier leakage and Auger recombination) into account. By fitting the external quantum efficiency-injection current (η-I) measurements of two LED samples, the validity of the model is demonstrated. The fit results show that the main origin of efficiency droop at a high injection current is carrier leakage. Furthermore it is also indicated that carrier delocalization plays an important role in the efficiency droop effect in those LEDs of large localization degree.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
