Abstract
A method is outlined for the accurate determination of detection efficiencies of thin planar semiconductor detectors. The method involves experimental measurement of the detection efficiency, combining values obtained from standard sources with values obtained from two experimental techniques developed to provide a larger number of reliable experimental values. A theoretical model, independent of the measured efficiency is then used to interpolate between experimental values. The reliability of the model is verified by an absolute comparison of the calculated efficiency with the experimental efficiency. The theoretical values for a typical intrinsic germanium detector are shown to agree within 3% with all experimental values between 6 keV and 60 keV.
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