Abstract
Compact titanium carbide coatings have been obtained by reacting graphitic substrates with gaseous TiCl 4H 2 mixtures at 1100–1800 K. These coatings, which have been realized by a reactive chemical vapor deposition technique (CVD) adhere perfectly and regularly to the substrate. The growth rate of the carbide layer is limited by solid state diffusion, and the activation energy, which only slightly depends on the crystallinity of the graphite, has been obtained to be 61.7 kJ mol −s1 for a polycrystalline substrate. X-ray diffraction and microprobe analysis show that the carbon concentration in the coating decreases from the carbon/carbide interface to the outer surface. Oxygen traces detected by XPS have been attributed to non-stoichiometric TiO 2− x formation. The influence of temperature on morphology of the TiC coating has also been investigated.
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