Effects on the implanted profiles of point defect flux during nitrogen implantation in copper

Abstract

Coupled continuity equations for nitrogen atoms and vacancy fluxes are solved for known experimental conditions concerning the depth profiles of nitrogen implanted in copper at different energies and temperatures. It is observed that for implantations carried out at 200°C, nitrogen atoms possibly get trapped into vacancies during implantation and the vacancies tend to form clusters. The surface peak observed in depth profile data is shown to be due to Gibbsian segregation. The nitrogen diffusion coefficient is observed to be almost constant as temperature increases from -200°C up to 200°C.