Abstract
In this paper, novel features offered by Resonant Tunneling Diode (RTD) are reviewed by simulating it under different conditions. The commonly used GaAs/AlGaAs RTD is used as the reference one. The effects of variations of different parameters on RTD's characteristics are mainly focused in this work. A simple model of resonant electronic transport through a double-barrier structure is developed and it is simulated in Silvaco-Atlas software. I-V characteristics are studied by varying barrier parameters and well width. Different peak and valley currents are measured under these conditions. For the same set of parameters both symmetric and asymmetric cases are considered.
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