Abstract
The effects on electrical properties of solution-processed indium zinc tin oxide (IZTO) thin film transistors (TFTs) by nitrogen incorporation were investigated as a function of annealing temperature. The nitrogen incorporation was controlled by NH 4 0H addition into a precursor solution of zinc, indium, and tin chlorides. At 600°C annealing, the nitrogen-doped IZTO TFTs showed a field-effect mobility of 5.33 cm 2 /V s with an on/off ratio of 2.05 × 10 7 , By the nitrogen incorporation, the annealing temperature could be lowered to 400°C for the fabrication of TFTs having a field-effect mobility of 0.303 cm 2 /V s. Physical and chemical analyses on films at various annealing temperatures were performed and compared, respectively.
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