Abstract
We report on the performance of GaInAsP/InP DFB lasers with Zn-doped active region. At both 1.3 and 1.55 μm we achieved a large bandwidth owing to the increased differential gain. The carrier lifetime of the lasers decreased with doping level. The decreased carrier lifetime had the effect of reducing the pattern effect, and we could obtain a clear eye opening with 4 Gbit/s NRZ modulation
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