Abstract
The effects of Y2O3 and In2O3 on the microstructure and electrical properties of SnO2-based varistors were investigated. It was observed that the grain size of the samples decreased with doping Y2O3 and In2O3 and accordingly, the breakdown electrical field EB increased greatly. The measurements of barrier height and grain size reveal that the variation of grain size was not the only reason for the change of electrical properties of the sample doped with In2O3 and, the improvement of nonlinear coefficient α may mainly attribute to the increase of barrier height. Some energy levels of different state defects on the grain boundary were obtained and the energy about 0.15 eV detected here of all the samples may be attributed to the activation of . The different effects of doping Y2O3 and In2O3 indicate that In2O3 is more effective to improve nonlinear electrical behavior and breakdown electrical field of SnO2-based varistors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
