Abstract
Single crystals of magnesium-aluminate spinel MgAl 2O 4 were irradiated with 340 keV Xe ++ ions at −173°C (∼100 K). A fluence of 1×10 20 Xe/m 2 created an amorphous layer at the surface of the samples. The samples were annealed for 1 h at different temperatures ranging from 130°C to 880°C. Recrystallization took place in the temperature interval between 610°C and 855°C. Transmission electron microscopy (TEM) images show two distinct layers near the surface: (1) a polycrystalline layer with columnar grain structure; and (2) a buried damaged layer epitaxial with the substrate. After annealing at 1100°C for 52 days, the profile of implanted Xe ions did not change, which means that Xe ions are not mobile in the spinel structure up to 1100°C. The thickness of the buried damaged layer decreased significantly in the 1100°C annealed sample comparing to the sample annealed for 1 h at 855°C.
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