Effects of X-ray accelerating voltage on electrical properties and reliability for ferroelectric random-access memory (FeRAM)

Abstract

This work investigates the effect of X-ray accelerating voltage (V acc) on the structural repair of HfZrOx ferroelectric random-access memory. We found that X-rays are able to break the molecular bonds due to missing electrons, thereby repairing the material structure. To further understand the influence of X-ray V acc on structural repair, we conducted different V acc conditions, with results showing that there is only a small improvement under high V acc. However, the improvement is much clearer under low V acc. To illuminate these results, we propose a physical model which is based on different X-ray energies that will have different energy penetration capacities.