Abstract
Zinc oxide films have been actively investigated as transparent electrode materials for optical displays. We report the effect of the working pressure on the electrical and optical properties of Al-doped ZnO thin films deposited by D.C. magnetron sputtering. The films were deposited in working pressures ranging from 1 mTorr to 10 mTorr. The effect of the working pressure was determined and the mechanism of the electrical and optical properties was explained. To understand the relationship between the electrical and optical properties of the films and film structure, the film density, resistivity, carrier concentration, carrier mobility, mean free path and optical band-gap in the films were measured as a function of the working pressure.
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