Abstract
Effects of well thickness and Si doping on the optical properties of GaN/AlGaN (MQWs) have been investigated by picosecond time-resolved photoluminescence (PL) measurements. Our results have yielded that (i) the optical transitions in nominally undoped MQWs with narrow well thicknesses (Lw<40 Å) were blue shifted with respect to the GaN epilayer due to quantum confinement, however, no such blue shift was evident for the MQWs with well thicknesses larger than 40 Å, (ii) the band-to-impurity transitions were the dominant emission lines in nominally undoped MQWs of large well thicknesses (Lw>40 Å) at low temperatures, and (iii) Si doping improved significantly the crystalline quality of MQWs of large well thicknesses (Lw>40 Å). The implications of these results on the device applications based on III-nitride MQWs have been discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
