Effects of wave function penetration into the gate-oxide on self-consistent modeling of scaled MOSFETs

Abstract

Effects of wave function penetration into gate-oxide on properties of scaled nMOS devices in deep submicron regime are studied, taking into account the penetration effects on the solutions of both Schrodinger's and Poisson's equations. Numerical results show that penetration effects on properties of inversion layers become more important with scaling down of device dimensions. These effects are also more pronounced at strong inversion.