Abstract
The pure green emission with high external quantum efficiency of 0.03% is reported in the GaP diodes grown by the temperature difference method under controlled vapor pressure. The emission and photocapacitance spectra show remarkable variations with phosphorus pressure. The concentrations of deep levels are suppressed by an application of the optimum phosphorus pressure. Also, in nitrogen-doped diode, it has become clear that the density and energy of nitrogen levels in GaP depend largely on phosphorus pressure applied.
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