Abstract
The effects of vanadium substitution on the dielectric properties of amorphous SrBi 2 Ta 2 O 9 (SBT) thin films have been investigated. Vanadium substitution at the Ta site exists in the V 3+ valence state and acts as an acceptor, reducing the number of intrinsic oxygen vacancies and the leakage current of the amorphous SBT thin films. Furthermore, the dielectric properties are also improved. The leakage current values of the 92 and 31 nm thick SBTV thin-film capacitors were 8.8 nA cm −2 and 0.62 μA cm −2 at 1 V, respectively.
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