Abstract
V2O5-doped zinc titanate ceramics (ZnTiO3) were prepared by conventional mixed-oxide method combined with a semi-chemical processing. The effects of V2O5 addition on the phase-structures and the dielectric properties of ZnTiO3 ceramics were investigated. The results show the sintering temperature of zinc titanate ceramics could be lowered from 1,150 to 930 °C by reducing the size of starting powders using a semi-chemical processing; and with adding V2O5 addition, the densification temperature of ZnTiO3 ceramics could be reduced to 875 °C. Also the phase transition temperature from hexagonal ZnTiO3 phase to cubic Zn2TiO4 was lowered by adding V2O5. The best properties were: ɛ r = 20.6, \( Q \times f = 8,873\;{\text{GHz}} \), when the ceramics was sintered at 900 °C, which is a promising candidate in the field of multi-layer devices requiring low sintering temperature (≤900 °C).
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