Abstract
Effects of Ⅴ/Ⅲ ratio on structural, optical, and electrical properties of semi-polar (11 2‾ 2) n-Al0.61Ga0.39N epi-layers grown by metal organic chemical vapor deposition technology were extensively investigated. Insufficient supply of effective nitrogen atoms on the epitaxial surface under low Ⅴ/Ⅲ ratio was responsible for the decrease in growth rate. The grain density on the epitaxial surface decreased significantly with increasing Ⅴ/Ⅲ ratio and hence led to a reduction in surface roughness. The three emission peaks observed in the photoluminescence spectra were verified to be related to substantial carbon atoms on nitrogen sites (CN), isolated cation vacancies (VⅢ), and their complexes (VⅢ complex), respectively. Electrical properties of semi-polar n-Al0.61Ga0.39N was improved with increasing Ⅴ/Ⅲ ratio since an N-rich environment was identified to be effective in suppressing the incorporation of CN-related defects. However, the formation of VⅢ and VⅢ complex was enhanced under over-rich nitrogen ambient, resulting in a degradation in electrical properties. Raman analysis showed that the in-plane stress of n-Al0.61Ga0.39N was hardly affected by variation in V/III ratio.
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