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Abstract
We investigate the effect of a UV-irradiated poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) buffer layer on the performance of polymer photovoltaic cells based on poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blends. It was found that UV irradiation can reduce the bulk and contact resistance of PEDOT:PSS films, improving the power conversion efficiency from (3.05 ± 0.04)% to (3.50 ± 0.03)% due to the lower device series resistance under an illumination of AM1.5G, 100 mW/cm 2. The work function change after UV irradiation and negligible surface morphology change was noticed.
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