Abstract
Abstract The effects of a large external uniaxial stress ([sgrave]) along [100] on the optical features associated with biaxially strained bulk GaAs and two GaAs/Ga1−xAl x As single quantum wells (SQWs), with widths of 52 and 200 A, grown on Si(001) have been studied using photoreflectance at 77 and 300 K. Measurements were made with incident light polarized parallel and perpendicular to [sgrave]. This stress configuration makes it possible to externally alter the light-hole (LH) and heavy-hole (HH) splitting in both the bulk material and the SQWs. In the SQW of width 200 A, the ground-state valence band was continually tuned from HLs to HHs. In the bulk material, a stress-induced anticrossing of the LH and HH features of the fundamental gap was observed with an interesting polarization effect.
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