Abstract
We report on the electrical characteristics for the metal-insulator-semiconductor (MIS) structure of low-dielectric-constant SiOC(−H) films. The SiOC(−H) thin films were deposited on p-Si(100) substrates by using a plasma-enhanced atomic layer deposition (PEALD) system. To improve the structural and the electrical characteristics, we post-treated the SiOC(−H) films deposited using PEALD with ultraviolet (UV) irradiation for various time intervals. The radical intensities in the bulk plasma were observed to be influenced strongly by the radio-frequency (rf) power. A complete dissociation of the trimethylsilane (TMS) precursor took place for rf powers greater than 300 W. As the UV treatment time was increased, the bonding structure of the SiOC(−H) film clearly separated to Si-O-Si and Si-O-C bonds. Also, the fixed charge density and the interface state density on the SiOC(−H)/p-Si(100) interface decreased as the UV treatment time was increased to 6 min. Therefore, we were able to minimize the defects and to reduce the interface charge by adjusting the UV dose.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.