Abstract
NiGe/n-Ge Schottky barrier height is modulated by Ni/n-Ge reaction with 1 nm Al as an intermediate layer. The series resistance, barrier height and ideal factor of Schottky diodes are extracted by the forward<i> I</i>-<i>V</i> method, Cheung method and Norde method, respectively. Comparing with Ni/n-Ge SBD, the introduction of 1 nm Al insertion layer between Ni and Ge substrates can effectively reduce the barrier height and maintain stability between 350 ℃ and 450 ℃.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
