Abstract

Polycrystalline ZnO thin films are deposited on SiO/sub 2//Si(100) substrate using RF magnetron sputtering. The film deposition performed in this research is composed of the following two procedures; 1/sup st/-deposition for 30 min without oxygen at 100 W and 2/sup nd/-deposition with oxygen in the range O/sub 2//(Ar+O/sub 2/)=10/spl sim/50%. Deposited ZnO films reveal a strongly c-axis preferred-orientation (the corresponding texture coefficient /spl sim/100%) as well as a high resistivity (>10/sup 7//spl Omega/cm). It is also observed that the crystallite size of ZnO is noticeably increased by thermal-annealing. In addition, surface acoustic wave (SAW) devices are also fabricated by using a lift-off method, with the configuration of IDT/ZnO/SiO/sub 2//Si(100). Frequency response characteristics (including S/sub 21/) of fabricated SAW devices are measured and device parameters including insertion losses and side-lobe rejection level estimated from frequency response are compared.

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