Abstract
AbstractControlled-geometry pore structures were introduced into undoped and Ti-doped sapphire using microfabrication techniques, and subsequently transferred to internal sapphire-sapphire and sapphire-polycrystalline alumina interfaces via hot pressing. The high-temperature evolution of several different types of structures was examined, in order to isolate different surface properties and evolution processes which are of interest during sintering. A study of pore channel breakup showed that Ti strongly stabilizes channels oriented in the sapphire [1100] direction, suggesting a significant alteration of the Wulff plot. In another study, the equilibration rate of isolated pores was enhanced in Ti-doped sapphire; as glassy phases are unlikely in this material, a solid-state diffusion mechanism for this enhancement is suggested. The evolution of pore channels with pre-existent perturbations was also studied, and the results of these studies are presented.
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