Abstract
The reactions of <TEX>$Cu/Ti/SiO_2$</TEX> structures at temperatures ranging from 200 to <TEX>$700^{\circ}C$</TEX> have been studied for various Ti thicknesses. The reaction products initially formed, at around <TEX>$300^{\circ}C$</TEX>, were a series of Cu-Ti intermetallics (<TEX>$Cu_3$</TEX>Ti/CuTi) with the oxygen dissolved in the Ti moving from the compounds into the remaining unreacted Ti. At <TEX>$500^{\circ}C$</TEX>, the <TEX>$Cu_3$</TEX>Ti was converted into Cu-rich intermetallics, <TEX>$Cu_4$</TEX>Ti, which grew at the expense of the CuTi due to the increased oxygen content in the Ti. In addition, the outdiffusion of Ti, to the Cu surface, and the <TEX>$Ti-SiO_2$</TEX> reactions, caused an abrupt increase in the oxygen content in the Ti layer, which placed thermodynamic restraints on further Ti reactions. Furthermore, thinner Ti layers showed a higher increasing rate of oxygen accumulation for the same consumption of Ti, which led to significantly reduced Ti consumption. The <TEX>$SiO_2$</TEX> film under the Ti diffusion barrier was more easily destroyed with increasing Ti thickness.
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