Effects of Ti on N distribution and diffusion in FeTiN thin films

Abstract

We studied the distribution and diffusion of N atoms in FeTiN single-layer and bilayer thin films by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). We found that in as-deposited films N atoms are first absorbed by Ti atoms, the rest being dissolved into FeTi lattices. Ti not only directly absorbs N by chemical bonding, but also decreases the energy of the N atoms that are dissolved into FeTi lattices. The diffusion study of N atoms in single layer and bilayer films showed that although the presence of Ti stabilized the /spl alpha/ phase of FeTi lattices during 200/spl deg/C annealing, the diffusion length of dissolved N in FeTi (Ti/spl les/8 at.%) lattices was still comparable to the diffusion length of N in pure Fe. Thus, the addition of a small amount of Ti in /spl alpha/-Fe lattice can not completely stabilize N atoms in the film, and the induced magnetic anisotropy of the films can still be unstable, although the /spl alpha/ phase of FeTiN is stabilized by the addition of Ti. The distribution of N atoms in bilayer films can be fitted by a simple enthalpy model.