Abstract
We report the effects of thermal oxidation on the sensing properties of porous silicon. Porous silicon substrates were prepared by electrochemical etching and thermally oxidized at different temperatures. A comparative EDS analysis shows that porous surfaces oxidized at higher temperatures have higher oxygen-to-silicon ratios. Our results indicate that the chemoresistive response due to the presence of isopropanol vapors at room temperature also increases with an increasing oxidation temperature. The presence of oxygen atoms in the PS layer could both protect the sensor from further atmospheric oxidation and increase its sensitivity.
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